elektronische bauelemente 2SD2142 0.3a , 40v npn plastic-encapsulate transistor 04-mar-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free feature darlington connection for a high h fe . high input impedance. marking package information package mpq leadersize sot-23 3k 7 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 32 v emitter to base voltage v ebo 12 v collector current - continuous i c 300 ma collector power dissipation p c 200 mw thermal resistance from junction to ambient r ja 625 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 40 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 32 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 12 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =30v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =12v, i c =0 dc current gain h fe 5000 - - v ce =3v, i c =100ma collector to emitter saturation voltage v ce(sat) - - 1.4 v i c =200ma, i b =0.2ma transition frequency f t - 200 - mhz v ce =5v, i c =10ma, f=100mhz collector output capacitance c ob - 2.5 - pf v cb =10v, i e =0, f=1mhz sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 r1m
elektronische bauelemente 2SD2142 0.3a , 40v npn plastic-encapsulate transistor 04-mar-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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